Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes

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著者

    • Yu Sheng-Fu Yu Sheng-Fu
    • Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
    • Lin Ray-Ming Lin Ray-Ming
    • Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan
    • Chang Shoou-Jinn [他] Chang Shoou-Jinn
    • Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
    • Chu Fu-Chuan
    • Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan

抄録

In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445 nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350 mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 022102-022102-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155322
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454311
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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