AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

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著者

    • Muzioł Grzegorz
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
    • Sawicka Marta
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
    • Feduniewicz-Żmuda Anna
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
    • Cywiński Grzegorz
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
    • Grzanka Szymon
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
    • Perlin Piotr
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
    • Wiśniewski Przemysław
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
    • Wasilewski Zbigniew R.
    • Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1A 0R6, Canada
    • Porowski Sylwester
    • Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland

抄録

Room-temperature continuous wave lasing at 432 nm with a threshold current of 7.6 kA/cm2 for nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy is reported. The diodes were grown on c-plane GaN substrates with a threading dislocation density of 5\times 10^{7} cm-2. We used a simplified laser structure design with GaN claddings where the optical modes were confined by the thick 120 nm In0.08Ga0.92N waveguide. Our LDs show a high optical output power of 130 mW, a differential gain of 0.5 W/A, and a lifetime of 50 h.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 022104-022104-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155354
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454317
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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