Photothermal Signal and Surface Potential around Grain Boundaries in Multicrystalline Silicon Solar Cells Investigated by Scanning Probe Microscopy

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The nonradiative recombination property of photocarriers is investigated around grain boundaries (GBs) in multicrystalline Si solar cells via local measurements of the photothermal (PT) signal using a dual sampling method in atomic force microscopy. An enhancement of the PT signal was observed around some specific GBs, where a change in the surface potential was also observed by Kelvin probe force microscopy. We therefore deduce that impurity segregation occurs in those areas, and that the PT signal enhancement and surface potential change are respectively attributable to the enhancement of carrier recombination by those impurity levels and the ionization of impurities.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 022301-022301-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155404
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454330
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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