GaAsBi Photoconductive Terahertz Detector Sensitivity at Long Excitation Wavelengths

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We report the terahertz frequency radiation detection using photoconductive antennas fabricated from molecular-beam-epitaxy-grown GaAsBi. We have estimated that the detector has the highest sensitivity when illuminated with 1.1- to 1.3-μm-wavelength femtosecond pulses. Electron scattering to higher conduction valleys takes place at shorter wavelengths; thus, we have determined the intervalley separation in the conduction band (0.26--0.29 eV). Though the sensitivity of GaAsBi detector at 1.55 μm decreases by about 40% compared with its maximum value, we have demonstrated a terahertz time domain spectroscopy system based on the femtosecond Er-doped fiber laser using this detector.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 022601-022601-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155501
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454360
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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