Formation of High-Density Dislocations and Hardening in Femtosecond-Laser-Shocked Silicon

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著者

    • Sano Tomokazu Sano Tomokazu
    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Ogura Tomo [他] Ogura Tomo
    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Okoshi Masayuki
    • Department of Electrical and Electronic Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
    • Inoue Narumi
    • Department of Electrical and Electronic Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
    • Ozaki Norimasa
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Kodama Ryosuke
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Hirose Akio
    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

抄録

High-density dislocations are formed in silicon by a femtosecond-laser-driven shock wave. The silicon is hardened to around 6.4 times harder than the matrix material as measured by micro-indentation hardness test using nanoindentation. Because the depth, size, and inhomogeneity of the area where the high-density dislocations exist are the same as those of the hardened area, we conclude that the hardening is caused by the high density of dislocations. We suggest that the femtosecond laser shock compression plays an important role in creating high-energy-density states in materials.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 022703-022703-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155552
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454381
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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