Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

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著者

    • Iba Satoshi Iba Satoshi
    • National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
    • Saito Hidekazu Saito Hidekazu
    • National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
    • Jansen Ron
    • National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
    • Yuasa Shinji
    • National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
    • Ando Koji
    • National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan

抄録

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^{16}--10^{19} cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p\sim 10^{16} cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 023003-023003-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155646
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454405
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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