Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires

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The electronic properties of GaN nanowires containing AlN/GaN multiple quantum disks, grown on Si(111) and luminescing at 3.55 eV, have been studied with nanometric resolution and have been correlated with their structural and optical characteristics. Profiles of the electrostatic potential across the quantum disks have been obtained by electron holography. Such profiles suggest an AlN/GaN conduction band offset of {\sim}1.5 eV and an average internal polarization field in the quantum disks of {\sim}1.8 MV/cm. A simulated energy band profile based on these results agrees with the luminescence measurements.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 025001-025001-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155714
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    18820778
  • NDL 記事登録ID
    023454443
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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