Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate

この論文にアクセスする

この論文をさがす

著者

    • Hiramatsu Kazumasa
    • Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
    • Kuwahara Takaaki
    • Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
    • Mitsuhara Masatoshi
    • Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
    • Kuwano Noriyuki
    • Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

抄録

The growth conditions and interface microstructure of AlN on sapphire grown using a nucleation layer (NL) have been studied. The AlN layer with NL-AlN grown at 1100 °C exhibits a smooth surface morphology. The epilayer has a small amount of tilting but the twisting is large. For the AlN layer with NL-AlN grown at 1250 °C, the twisting is reduced, but the surface is rough owing to the mixing of crystallographic polarity. The origins of AlN inversion domains are discussed by considering the microstructures observed by transmission electron microscopy (TEM), with the ultimate aim of growing a high-quality AlN layer.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 025501-025501-3, 2012-02-25

    The Japan Society of Applied Physics

参考文献:  12件中 1-12件 を表示

  • <no title>

    KUECH T. F.

    J. Appl. Phys. 62, 632, 1987

    被引用文献1件

  • <no title>

    EDGAR J. H.

    Gallium Nitride and Related Semiconductors, 1999

    被引用文献1件

  • <no title>

    KATONA T. M.

    Appl. Phys. Lett. 84, 5025, 2004

    被引用文献1件

  • <no title>

    NEWMAN S. A.

    Appl. Phys. Lett. 94, 121906, 2009

    被引用文献1件

  • <no title>

    IMURA M.

    Appl. Phys. Lett. 89, 221901, 2006

    被引用文献1件

  • <no title>

    HIRAYAMA H.

    Phys. Status Solidi A 206, 1176, 2009

    被引用文献1件

  • <no title>

    BANAL R. G.

    Appl. Phys. Lett. 92, 241905, 2008

    被引用文献1件

  • <no title>

    NAGASHIMA T.

    Phys. Status Solidi C 6, S444, 2009

    被引用文献1件

  • <no title>

    MIYAGAWA R.

    Phys. Status Solidi C 8, 2069, 2011

    被引用文献1件

  • <no title>

    KUMAGAI Y.

    Appl. Phys. Express 1, 045003, 2008

    被引用文献1件

  • <no title>

    WU Y.

    Appl. Phys. Lett. 84, 912, 2004

    被引用文献1件

  • <no title>

    WONG M. H.

    J. Appl. Phys. 108, 123710, 2010

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10030155844
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454496
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ