Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate

Access this Article

Search this Article

Author(s)

Journal

  • Applied physics express : APEX

    Applied physics express : APEX 5(2), "025501-1"-"025501-3", 2012-02-25

    Japan Society of Applied Physics

References:  12

  • <no title>

    KUECH T. F.

    J. Appl. Phys. 62, 632, 1987

    Cited by (1)

  • <no title>

    EDGAR J. H.

    Gallium Nitride and Related Semiconductors, 1999

    Cited by (1)

  • <no title>

    KATONA T. M.

    Appl. Phys. Lett. 84, 5025, 2004

    Cited by (1)

  • <no title>

    NEWMAN S. A.

    Appl. Phys. Lett. 94, 121906, 2009

    Cited by (1)

  • <no title>

    IMURA M.

    Appl. Phys. Lett. 89, 221901, 2006

    Cited by (1)

  • <no title>

    HIRAYAMA H.

    Phys. Status Solidi A 206, 1176, 2009

    Cited by (1)

  • <no title>

    BANAL R. G.

    Appl. Phys. Lett. 92, 241905, 2008

    Cited by (1)

  • <no title>

    NAGASHIMA T.

    Phys. Status Solidi C 6, S444, 2009

    Cited by (1)

  • <no title>

    MIYAGAWA R.

    Phys. Status Solidi C 8, 2069, 2011

    Cited by (1)

  • <no title>

    KUMAGAI Y.

    Appl. Phys. Express 1, 045003, 2008

    Cited by (1)

  • <no title>

    WU Y.

    Appl. Phys. Lett. 84, 912, 2004

    Cited by (1)

  • <no title>

    WONG M. H.

    J. Appl. Phys. 108, 123710, 2010

    Cited by (1)

Codes

  • NII Article ID (NAID)
    10030155844
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    18820778
  • NDL Article ID
    023454496
  • NDL Call No.
    Z78-A526
  • Data Source
    CJP  NDL  Crossref 
Page Top