High Purity Semi-Insulating 4H-SiC Epitaxial Layers by Defect-Competition Epitaxy: Controlling Si Vacancies

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Thick, high-purity semi-insulating (SI) homoepitaxial layers on 4H-SiC were demonstrated using a novel compensation scheme controlled by defect-competition epitaxy at C/Si ratios of 1.3--1.5. These showed resistivity of {\sim}10^{9} \Omega cm. Comparison of secondary ion mass spectra between low-doped epilayers grown at C/Si ratio {<}1.3 and SI epilayers grown at C/Si ratio {>}1.3 showed little difference in residual impurity concentrations. A reconciliation of impurity concentration with measured resistivity indicated a compensating trap concentration of {\sim}10^{15} cm-3 present only in SI epilayers. High-resolution photoinduced transient spectroscopy (HRPITS) identified them as Si vacancy related centers, with no detectable EH6/7 and Z1/2 levels. Recombination lifetimes of {\sim}5 ns suggest application in fast-switching power devices.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 025502-025502-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155857
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454501
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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