Growth of Prismatic GaN Single Crystals with High Transparency on Small GaN Seed Crystals by Ca–Li-Added Na Flux Method Growth of Prismatic GaN Single Crystals with High Transparency on Small GaN Seed Crystals by Ca--Li-Added Na Flux Method

この論文にアクセスする

この論文をさがす

著者

    • Imabayashi Hiroki
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Takazawa Hideo
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Todoroki Yuma
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Matsuo Daisuke
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Maruyama Mihoko
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Imade Mamoru
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Yoshimura Masashi
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Sasaki Takatomo
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
    • Mori Yusuke
    • Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan

抄録

The addition of Ca--Li to Na flux was attempted in order to control the growth habit and further improve transparency of GaN crystals. As a result, the growth habit changed to prism shape by the addition of Ca. Furthermore, we succeeded in growing prismatic GaN crystals with high transparency by adding appropriate amounts of Ca and Li to the flux. The optical absorption coefficient at 450 nm wavelength obtained from the crystal was 1.07 cm-1. This result suggests that the addition of Ca--Li to Na flux is a promising method of growing transparent GaN single crystals.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 025503-025503-3, 2012-02-25

    The Japan Society of Applied Physics

参考文献:  17件中 1-17件 を表示

  • <no title>

    AMANO H.

    Jpn. J. Appl. Phys. 28, L2112, 1989

    被引用文献1件

  • <no title>

    SAITO W.

    IEEE Trans. Electron Devices 50, 2528, 2003

    被引用文献1件

  • <no title>

    TOMIYA S.

    Phys. Status Solidi A 188, 69, 2001

    被引用文献1件

  • <no title>

    FUJITO K.

    J. Cryst. Growth 311, 3011, 2009

    被引用文献1件

  • <no title>

    HASHIMOTO T.

    J. Cryst. Growth 310, 3907, 2008

    被引用文献1件

  • <no title>

    DWILINSKI R.

    J. Cryst. Growth 311, 3015, 2009

    被引用文献1件

  • <no title>

    IMADE M.

    Appl. Phys. Express 3, 075501, 2010

    被引用文献1件

  • <no title>

    YAMANE H.

    Jpn. J. Appl. Phys. 44, 3157, 2005

    被引用文献1件

  • <no title>

    MORISHITA M.

    J. Cryst. Growth 284, 91, 2005

    被引用文献1件

  • <no title>

    KAWAMURA F.

    J. Cryst. Growth 310, 3946, 2008

    被引用文献1件

  • <no title>

    MATSUOKA T.

    U. S. Patent 7928447 B2, 2011

    被引用文献1件

  • <no title>

    IWAHASHI T.

    Jpn. J. Appl. Phys. 46, L103, 2007

    被引用文献1件

  • <no title>

    UKEGAWA H.

    Proc. SPIE 7939, 79392A, 2011

    被引用文献1件

  • <no title>

    KAWAMURA F.

    Jpn. J. Appl. Phys. 41, L1440, 2002

    被引用文献1件

  • <no title>

    KAWAMURA F.

    Jpn. J. Appl. Phys. 42, L729, 2003

    被引用文献1件

  • The preparation and properties of vapor-deposited single-crystalline GaN

    MARUSKA H. P.

    Appl. Phys. Lett. 15(10), 327-329, 1969

    DOI 被引用文献10件

  • <no title>

    YOSHIKAWA A.

    J. Crystal Growth 260, 67, 2004

    被引用文献17件

各種コード

  • NII論文ID(NAID)
    10030155880
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454506
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ