Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

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著者

    • Song Xi
    • LMP (EA 3246), 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France
    • Ghouli Hassan
    • SOITEC SPECIALTY ELECTRONICS, Place Marcel Rebuffat, Z. A. de Courtaboeuf 7, 91140 Villejust, France
    • Lijadi Melania
    • SOITEC SPECIALTY ELECTRONICS, Place Marcel Rebuffat, Z. A. de Courtaboeuf 7, 91140 Villejust, France
    • Naÿm Laurent
    • SOITEC SPECIALTY ELECTRONICS, Place Marcel Rebuffat, Z. A. de Courtaboeuf 7, 91140 Villejust, France
    • Kennard Mark
    • SOITEC SPECIALTY ELECTRONICS, Place Marcel Rebuffat, Z. A. de Courtaboeuf 7, 91140 Villejust, France
    • Cordier Yvon
    • CRHEA--CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
    • Rondi Daniel
    • OMMIC, 2 chemin du Moulin, B. P. 11, 94453 Limeil-Brévannes Cedex, France
    • Alquier Daniel
    • LMP (EA 3246), 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France

抄録

We report on silicon n-type delta (\delta)-doping of gallium nitride (GaN) epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon (111) substrates. In a series of group III--nitride epitaxial structures a {\sim}1-μm-thick Si bulk-doped GaN layer is replaced by 100, 50, 10, 5, or 1 Si \delta-doped planes. While Si bulk-doping of GaN aggrandizes the in-plane tensile stress and the wafer bow with respect to undoped structures, \delta-doping is found to reduce both stress and wafer bow. Two-dimensional carrier sheet densities between 10^{12} and 10^{13} cm-2 per \delta-doped plane and electron mobilities of 1429 cm2 V-1 s-1 are achieved.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 025504-025504-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155898
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454517
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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