Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited A₂O₃ Overlayer and its Electric Properties Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties

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We have established an atomic-layer-deposited Al2O3 overlayer deposition method, which makes the H-surface-terminated p-type channel diamond surface thermally stable and completely keeps the concentration and mobility high even at 150 °C. In a range from 230 to 500 K, the mobility is proportional to the inverse of temperature showing a property characteristic for degenerate hole gas. The ionization energy is estimated to be 6.1 meV, indicating that holes are not generated mainly by thermal activation. This thermal stabilization technology enables us to measure hole properties up to 230 °C and to realize H-terminated diamond field-effect transistors with a reproducible high drain current.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 025701-025701-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155933
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454527
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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