Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors

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Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spin-coating method. The devices exhibit p-type operation with the mobility on the order of 10^[-2] cm2V^[-1]s^[-1]. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the temperature range in which the mobility is constant is between 230 and 350 K for 3-TTPPh-5.

Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spin-coating method. The devices exhibit p-type operation with the mobility on the order of 10<sup>-2</sup>cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the temperature range in which the mobility is constant is between 230 and 350K for 3-TTPPh-5.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 94(11), 1720-1726, 2011-11-01

    一般社団法人 電子情報通信学会

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各種コード

  • NII論文ID(NAID)
    10030190075
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  IR  J-STAGE 
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