Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors

• FUNAHASHI Masahiro

  Kagawa University

• ZHANG Fapei

  Chinese Academy of Science

• TAMAOKI Nobuyuki

  Hokkaido University

Abstract

Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spin-coating method. The devices exhibit p-type operation with the mobility on the order of 10^-2cm²V^-1s^-1. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the temperature range in which the mobility is constant is between 230 and 350K for 3-TTPPh-5.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E94.C (11), 1720-1726, 2011

  The Institute of Electronics, Information and Communication Engineers

Keywords

• liquid-crystalline semiconductor
• field-effect transistor
• carrier transport
• field-effect mobility
• phenylterthiophene

Details

• CRID: 1390001204376886400
• NII Article ID: 10030190075
• NII Book ID: AA10826283
• DOI: 10.1587/transele.e94.c.1720
• ISSN: 17451353
• ISSN: 09168524
• HANDLE: 2115/49110
• Web Site: https://www.jstage.jst.go.jp/article/transele/E94.C/11/E94.C_11_1720/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • IRDB
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed