Frequency Characteristics of Polymer Field-Effect Transistors with Self-Aligned Electrodes Investigated by Impedance Spectroscopy

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Solution-based organic field-effect transistors (OFETs) with low parasitic capacitance have been fabricated using a self-aligned method. The self-aligned processes using a cross-linking polymer gate insulator allow fabricating electrically stable polymer OFETs with small overlap area between the source-drain electrodes and the gate electrode, whose frequency characteristics have been investigated by impedance spectroscopy (IS). The IS of polymer OFETs with self-aligned electrodes reveals frequency-dependent channel formation process and the frequency response in FET structure.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 94(11), 1727-1732, 2011-11-01

    一般社団法人 電子情報通信学会

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各種コード

  • NII論文ID(NAID)
    10030190106
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
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