An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs

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This report describes a crystallization method we developed for amorphous (a)-Si film by using 405-nm laser diodes (LDs). The proposed method has been used to fabricate bottom gate (BG) microcrystalline (µc)-Si TFTs for the first time. A µc-Si film with high crystallinity was produced and high-performance BG µc-Si TFTs with a field effect mobility of 3.6cm<sup>2</sup>/Vs and a current on/off ratio exceeding 10<sup>8</sup> were successfully demonstrated. To determine the advantages of a 405-nm wavelength, a heat flow simulation was performed with full consideration of light interference effects. Among commercially available solid-state lasers and LDs with wavelengths having relatively high optical absorption coefficients for a-Si, three (405, 445, and 532nm) were used in the simulation for comparison. Results demonstrated that wavelength is a crucial factor for the uniformity, efficiency, and process margin in a-Si crystallization for BG µc-Si TFTs. The 405-nm wavelength had the best simulation results. In addition, the maximum temperature profile on the gate electrode through the simulation well explained the actual crystallinity distributions of the µc-Si films.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 94(11), 1733-1738, 2011-11-01

    一般社団法人 電子情報通信学会

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各種コード

  • NII論文ID(NAID)
    10030190130
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
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