An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs
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- MORIMOTO Kiyoshi
- Panasonic Corporation
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- SUZUKI Nobuyasu
- Panasonic Corporation
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- YAMANAKA Kazuhiko
- Panasonic Corporation
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- YURI Masaaki
- Panasonic Corporation
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- MILLIEZ Janet
- Panasonic Corporation of North America
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- LIU Xinbing
- Panasonic Corporation of North America
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Abstract
This report describes a crystallization method we developed for amorphous (a)-Si film by using 405-nm laser diodes (LDs). The proposed method has been used to fabricate bottom gate (BG) microcrystalline (µc)-Si TFTs for the first time. A µc-Si film with high crystallinity was produced and high-performance BG µc-Si TFTs with a field effect mobility of 3.6cm2/Vs and a current on/off ratio exceeding 108 were successfully demonstrated. To determine the advantages of a 405-nm wavelength, a heat flow simulation was performed with full consideration of light interference effects. Among commercially available solid-state lasers and LDs with wavelengths having relatively high optical absorption coefficients for a-Si, three (405, 445, and 532nm) were used in the simulation for comparison. Results demonstrated that wavelength is a crucial factor for the uniformity, efficiency, and process margin in a-Si crystallization for BG µc-Si TFTs. The 405-nm wavelength had the best simulation results. In addition, the maximum temperature profile on the gate electrode through the simulation well explained the actual crystallinity distributions of the µc-Si films.
Journal
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E94-C (11), 1733-1738, 2011
The Institute of Electronics, Information and Communication Engineers
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Details
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- CRID
- 1390282679353645696
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- NII Article ID
- 10030190130
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- NII Book ID
- AA10826283
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- ISSN
- 17451353
- 09168524
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed