Effects of Additive Elements on TFT Characteristics in Amorphous IGZO Films under Light Illumination Stress

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抄録

We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the V<sub>th</sub> shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn or Cu was not observed. It was found that the addition of Si or Hf element into the IGZO channel layer leads to reducing the hole trap sites formed at or near the gate insulator/IGZO channel interface.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 94(11), 1739-1744, 2011-11-01

    一般社団法人 電子情報通信学会

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各種コード

  • NII論文ID(NAID)
    10030190139
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
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