Crystal Growth of Silicate Phosphors from the Vapor Phase

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Well-crystallized Ba<sub>2</sub>SiO<sub>4</sub>: Eu<sup>2+</sup> powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400-1600°C from the SiO<sub>2</sub> source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar - 5 vol% H<sub>2</sub> gas and reacted with the raw material powders. The emission intensity of the Ba<sub>2</sub>SiO<sub>4</sub>: Eu<sup>2+</sup> phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 94(11), 1745-1748, 2011-11-01

    一般社団法人 電子情報通信学会

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各種コード

  • NII論文ID(NAID)
    10030190156
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
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