Wideband Inductor-Less Linear LNA Using Post Distortion Technique

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著者

    • AMIRABADI Amir
    • Faculty of Electrical and Computer Engineering, University of Tehran
    • KAMAREI Mahmoud
    • Faculty of Electrical and Computer Engineering, University of Tehran

抄録

In this paper a third-order inter-modulation cancellation technique using Pre-Post-Distortion is proposed to design a wideband high linear low-power LNA in deep submicron. The IM3 cancellation is achieved by post-distorting signal inversely after it is pre- distorted in the input trans-conductance stage during amplification process. The operating frequency range of the LNA is 800MHz-5GHz. The proposed technique increases input-referred third-order intercept point (IIP3) and input 1dB Compression point (P<sub>-1dB</sub>) to 12-25dBm and -1.18dBm, respectively. Post layout simulation results show a noise figure (NF) of 4.1-4.5dB, gain of 13.7-13.9dB and S11 lower than -13dB while consumes 8mA from 1.2V supply. The LNA is designed in a 65nm standard CMOS technology. The layout schematic shows that the LNA occupies 0.15×0.11mm<sup>2</sup> of silicon area.

収録刊行物

  • IEICE transactions on fundamentals of electronics, communications and computer sciences

    IEICE transactions on fundamentals of electronics, communications and computer sciences 94(8), 1662-1670, 2011-08-01

    The Institute of Electronics, Information and Communication Engineers

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各種コード

  • NII論文ID(NAID)
    10030190415
  • NII書誌ID(NCID)
    AA10826239
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168508
  • データ提供元
    CJP書誌  J-STAGE 
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