Effects of Substrate Temperature on Properties of Tin-Doped Indium Oxide Films Deposited by Activated Electron Beam Evaporation
The coating process was conducted using an inline-type plasma deposition system. Thin and thick films containing SnO<sub>2</sub> were prepared from the starting material sintered ITO pellets (0–15 wt% SnO<sub>2</sub>). The thin film (<0.6 μm thick) showed an amorphous-like structure. The thick film (>1 μm thick) showed a well-ordered crystalline structure. The crystalline and electrical properties of the films were dependent on the deposition temperature and were closely related to the SnO<sub>2</sub> contents. Films deposited on substrates at temperatures of 50–180°C comprised a mixture of amorphous and polycrystalline phases and had a hazy appearance because of light scattering at the rough surface. That appearance was not observed in films with 0 wt% SnO<sub>2</sub> content, but it was observed with increasing SnO<sub>2</sub> content and substrate temperature. In films with thickness greater than 0.6 μm, the hazy appearance was more pronounced than in films with thickness of less than 0.6 μm. Polycrystalline ITO films with a clean and transparent appearance, as well as minimum resistivity of 1.7×10<sup>−4</sup> Ω cm, were obtained on substrates at 180 °C (4 wt%, 7.5 wt% SnO<sub>2</sub>). Transparent and uniform ITO films with sheet resistance of 1.7 Ω/□ were obtained at 2.1 μm thickness at a high deposition rate (ca. 0.5 μm/min).
- 表面技術 = The journal of the Surface Finishing Society of Japan
表面技術 = The journal of the Surface Finishing Society of Japan 63(3), 173-178, 2012-03-01