High-Rate Reactive Deposition of SiO₂ Films Using a New DC Rotary Sputtering Cathode High-Rate Reactive Deposition of SiO_2 Films Using a New DC Rotary Sputtering Cathode

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DC reactive sputtering of SiO<sub>2</sub> films is performed using a new rotary cathode. The cathode is positioned at the center of the vacuum chamber used for deposition, so that the chamber is partitioned into a pre-sputtering zone and a deposition zone assisted by a partition block. When this new rotary cathode is used, the insulating film formed at the boundary between the eroded and uneroded areas on the target surface is removed. The insulating film mentioned above causes arcing during sputtering, but the new method suppresses arcing, and the electrical conductivity of the metallic cathode is increased. Consequently, the deposition rate is increased considerably during DC reactive sputtering.<br>This new method necessitates two separate zones in the vacuum chamber: a pre-sputtering zone and a deposition zone. Plasma of two types must be introduced into the two zones simultaneously. The ignition voltage and sputtering voltage in each zone are controlled according to the discharge gas pressure in each zone. Using this method, the deposition rate for SiO<sub>2</sub> films can be increased to 4 nm/s, which is 2.5 times the conventional deposition rate.

収録刊行物

  • 表面技術 = The journal of the Surface Finishing Society of Japan

    表面技術 = The journal of the Surface Finishing Society of Japan 63(3), 179-183, 2012-03-01

    一般社団法人 表面技術協会

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各種コード

  • NII論文ID(NAID)
    10030476807
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    023568145
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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