金属系放熱材料の開発の現状 Present Status for The Development of Metal-Based Heat Dissipative Materials

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High-performance thermal management materials should have high thermal conductivities and low coefficients of thermal expansion (CTE) for maximizing heat dissipation and minimizing thermal stress and warping, which are critical issues in packaging of power semiconductors, light-emitting diodes and micro electro mechanical systems. Thermal stress and warping arise from CTE differences, which become significant in advanced electronic devices because of high heat generated, for example, when high-power laser diodes or high integration level of IC are in use. To ensure ideal or desired performance and adequate life of these electronic devices, it is necessary to decrease the junction temperature between two components to temperatures lower than: 398 K for military and automobile logic devices; and 343 K for some commercial logic devices. In the case of high-power density devices, the allowable temperature range is limited in the package base and die-attach thermal resistances. In any cases, the development of thermal management materials is significant in electronics fields.<BR>In order to fabricate high-performance thermal management materials with ultra-high thermal conductivities and low CTEs, we have recently initiated a series of investigations, where metal-matrix composites (MMCs) containing high thermal conductive fillers were uniquely fabricated. In our study, to avoid the damage of filler particle surfaces, spark plasma sintering (SPS) processing was used as a processing technique. In the present review, thermal properties of particle dispersed MMCs fabricated using SPS process in our recent works are introduced in comparison with those produced using various fabrication techniques by other researchers.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 58(12), 717-726, 2011-12-15

    一般社団法人 粉体粉末冶金協会

参考文献:  53件中 1-53件 を表示

被引用文献:  1件中 1-1件 を表示

  • 粉末成形

    粉体加工成形プロセス分科会 , 徳岡 輝和

    塑性と加工 53(619), 710-711, 2012-08-25

    J-STAGE 参考文献26件

各種コード

  • NII論文ID(NAID)
    10030479575
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    05328799
  • NDL 記事登録ID
    023403275
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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