ビスマス系強誘電・圧電性結晶における格子欠陥制御と高機能化 Lattice-Defect Control for High-Performance Bismuth-Based Ferroelectric/Piezoelectric Crystals

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著者

    • 北中 佑樹 KITANAKA Yuuki
    • 東京大学先端科学技術研究センター Research Center for Advanced Science and Technology, The University of Tokyo
    • 野口 祐二 NOGUCHI Yuji
    • 東京大学先端科学技術研究センター Research Center for Advanced Science and Technology, The University of Tokyo
    • 宮山 勝 MIYAYAMA Masaru
    • 東京大学先端科学技術研究センター Research Center for Advanced Science and Technology, The University of Tokyo

抄録

In ferroelectric/piezoelectric materials, lattice defects with a high density often deteriorate their properties, and their essential nature does not appear. Recently, Bi-based ferroelectrics have attracted much attention as a Pb-free material from the environmental and economical points of view. However, high-quality single crystals of Bi-based ferroelectrics have not been obtained over the past 60 years because of the defect-related problems, and their fundamental properties are shrouded in a veil. In the present article, we show the crystal growth technique under high oxygen pressure as an effective method for growing high-quality Bi-based ferroelectric single crystals.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 59(1), 22-28, 2012-01-15

    一般社団法人 粉体粉末冶金協会

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各種コード

  • NII論文ID(NAID)
    10030479722
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    05328799
  • NDL 記事登録ID
    023492450
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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