Preparation of Thermoelectric Material Bi₂Te₂.₈₅Se₀.₁₅ by Mechanical Alloying-Hot Pressing and Melt Quenching Processes Preparation of Thermoelectric Material Bi_2Te_<2.85>Se_<0.15> by Mechanical Alloying-Hot Pressing and Melt Quenching Processes

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Bi<SUB>2</SUB>Te<SUB>2.85</SUB>Se<SUB>0.15</SUB> was prepared, without doping materials, by two different processes: mechanical alloying-hot pressing (MA-HP) and melt quenching (MQ). Doped Bi<SUB>2</SUB>Te<SUB>2.85</SUB>Se<SUB>0.15</SUB> is a well-known <I>n</I>-type Bi<SUB>2</SUB>Te<SUB>3</SUB>-based material. MA was carried out for 30 h. The MA-HP samples were obtained by hot pressing at 673 K under a mechanical pressure of 147 MPa in an argon atmosphere. The MQ samples were prepared by direct melting of the constituent elements at 973 K in an evacuated quartz ampoule followed by quenching into water.<BR>These samples were characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), optical microscopy (OM), and thermoelectric property measurements. The samples were identified as single-phase materials related to Bi<SUB>2</SUB>(Te, Se)<SUB>3</SUB>. The MA-HP sample showed <I>n</I>-type conduction, but the MQ sample showed <I>p</I>-type conduction. The carrier densities of the MA-HP and MQ samples at room temperature were, respectively, 1.80×10<SUP>25</SUP> m<SUP>-3</SUP> of <I>n</I>-type carriers and 2.90×10<SUP>25</SUP> m<SUP>-3</SUP> of <I>p</I>-type carriers. The maximum values of the figure of merit <I>ZT</I> for the MA-HP and the MQ samples were 0.853 at 313 K for <I>n</I>-type and 0.064 at 353 K for <I>p</I>-type, respectively.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 59(3), 121-125, 2012-03-15

    一般社団法人 粉体粉末冶金協会

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各種コード

  • NII論文ID(NAID)
    10030479922
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    023617930
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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