反応性イオンビームスパッタリングによるCoFe_2O_4(100)配向膜の作製 (100) Oriented CoFe_2O_4 Films Prepared by Reactive Ion Beam Sputtering

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Co ferrite films have been grown by a reactive ion beam sputtering under the Kr and O<SUB>2</SUB> mixture atmosphere. Most of the film contains (100) texture of Co spinel ferrite when the partial pressure ratio of O<SUB>2</SUB> is 8.6 %. Completely (100) orientated CoFe<SUB>2</SUB>O<SUB>4</SUB> films can be grown on Fe (10 nm)/MgO (10 nm) underlayer with (100) orientation. 5 nm-thick (100) CoFe<SUB>2</SUB>O<SUB>4</SUB> film is observed prepared at substrate temperature of 200°C. The (100) texture and the expansion of the lattice are the origin of the in-plane magnetic anisotropy. The internal stress expanding to perpendicular to plane is released at high substrate temperature. Thus, lattice expansion getting smaller at 200°C than 100°C. (100) well orientated CoFe<SUB>2</SUB>O<SUB>4</SUB> films can be grown not only Fe/MgO dual underlayer, but on Fe (10 nm) single underlayer.

Co ferrite films have been grown by a reactive ion beam sputtering under the Kr and O<SUB>2</SUB> mixture atmosphere. Most of the film contains (100) texture of Co spinel ferrite when the partial pressure ratio of O<SUB>2</SUB> is 8.6 %. Completely (100) orientated CoFe<SUB>2</SUB>O<SUB>4</SUB> films can be grown on Fe (10 nm)/MgO (10 nm) underlayer with (100) orientation. 5 nm-thick (100) CoFe<SUB>2</SUB>O<SUB>4</SUB> film is observed prepared at substrate temperature of 200°C. The (100) texture and the expansion of the lattice are the origin of the in-plane magnetic anisotropy. The internal stress expanding to perpendicular to plane is released at high substrate temperature. Thus, lattice expansion getting smaller at 200°C than 100°C. (100) well orientated CoFe<SUB>2</SUB>O<SUB>4</SUB> films can be grown not only Fe/MgO dual underlayer, but on Fe (10 nm) single underlayer.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 59(3), 145-148, 2012-03-15

    一般社団法人 粉体粉末冶金協会

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各種コード

  • NII論文ID(NAID)
    10030479973
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    023618027
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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