書誌事項
- タイトル別名
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- Measurement of Photoacoustic Signals of Depletion Layer in Planar Metal-Semiconductor-Metal Structure
- プレーナガタ Metal Semiconductor Metal コウゾウ ニ オケル クウボウソウ ノ ヒカリ オンキョウ シンゴウ ソクテイ
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The photoacoustic signal from the depletion layer was detected using the photoacoustic method formed within a planar metal-semiconductor-metal (MSM) structure. To measure the distribution of the photoacoustic signal from the depletion layer, the surface of the sample was illuminated and scanned by an intensity-modulated optical-beam. The amplitude and phase shifts of the observed signal increased with an increase in the reverse bias in the Schottky-barrier. The intensity distribution of the photoacoustic signal corresponded closely to the position of the photocurrent distribution showing the presence of the depletion layer measured by the photoelectric method. This demonstrates clearly that the photoacoustic signal reflects the presence of the depletion layer in semiconductor materials, and that the photoacoustic method can be used effectively for visualization of the depletion layer.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 131 (6), 447-451, 2011
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204600656896
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- NII論文ID
- 10030522206
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 11135273
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可