半導体ガスセンサの過渡応答への活性化エネルギーの影響  [in Japanese] Effects of Activation Energy to Transient Response of Semiconductor Gas Sensor  [in Japanese]

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Author(s)

Abstract

The smell classifiable gas sensor will be desired for many applications such as gas detection alarms, process controls for food production and so on. We have tried to realize the sensor using transient responses of semiconductor gas sensor consisting of tin dioxide and pointed out that the sensor gave us different transient responses for kinds of gas. Results of model calculation showed the activation energy of chemical reaction on the sensor surface strongly depended on the transient response. We tried to estimate the activation energies by molecular orbital calculation with SnO<sub>2</sub> Cluster. The results show that there is a liner relationship between the gradient of the transient responses and activation energies for carboxylic and alcoholic gases. Transient response will be predicted from activation energy in the same kind of gas and the smell discrimination by single semiconductor gas sensor will be realized by this relationship.

Journal

  • IEEJ Transactions on Electronics, Information and Systems

    IEEJ Transactions on Electronics, Information and Systems 132(4), 526-530, 2012-04-01

    The Institute of Electrical Engineers of Japan

References:  11

Codes

  • NII Article ID (NAID)
    10030530011
  • NII NACSIS-CAT ID (NCID)
    AN10065950
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    03854221
  • NDL Article ID
    023656234
  • NDL Call No.
    Z16-795
  • Data Source
    CJP  NDL  J-STAGE 
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