Temperature and Bias Voltage Dependencies of Spin Injection Signals for Co₂FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junction

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  • Saito Tatsuya
    Department of Materials Science, Graduate School of Engineering, Tohoku University
  • Tezuka Nobuki
    Department of Materials Science, Graduate School of Engineering, Tohoku University
  • Sugimoto Satoshi
    Department of Materials Science, Graduate School of Engineering, Tohoku University

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  • Temperature and Bias Voltage Dependencies of Spin Injection Signals for Co<sub>2</sub>FeAl<sub>0.5</sub>Si<sub>0.5</sub>/<i>n</i>-GaAs Schottky Tunnel Junction

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We investigated the temperature and bias voltage dependencies of spin injection signals for Co2FeAl0.5Si0.5 (CFAS)/n-GaAs schottky tunnel junction. Clear voltage change was observed at 10 K for the junction by 3 Terminal Hanle measurements. The maximum voltage change, ΔVMAX, was decreased with increasing temperature and observed up to 100 K. The estimated spin relaxation time, τ, was 290 ps at 10 K and was also decreased with increasing temperature. In addition, temperature dependency of τ was lower than that of ΔVMAX. The ΔVMAX was increased with increasing bias voltage, and the sign of ΔVMAX was reversed by opposite bias voltage direction. Moreover, bias dependency of ΔVMAX became insensitive with increasing temperature.

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