Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN

• AMANO Hiroshi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University Akasaki Research Center, Nagoya University

Bibliographic Information

Other Title

• 窒化物ワイドギャップ半導体の現状と展望―バルクGaN単結晶成長技術開発の観点から
• チッカブツ ワイドギャップ ハンドウタイ ノ ゲンジョウ ト テンボウ : バルク GaNタンケッショウ セイチョウ ギジュツ カイハツ ノ カンテン カラ

Abstract

GaN-based blue LEDs and HFETs are generally grown on foreign substrates, such as sapphire and Si. The dislocation density of the GaN grown on foreign substrates exceeds the mid 10⁸cm^-2 range, although the performance characteristics of the LEDs and HFETs are sufficiently high for their practical use. Theoretically, much higher performance devices can be expected using low-dislocation-density GaN substrates. In this review, the progress and prospects of the GaN substrate are described.

Journal

• Oyo Buturi

  Oyo Buturi 81 (6), 455-463, 2012-06-10

  The Japan Society of Applied Physics

Keywords

• group III nitride semiconductors
• Na flux method
• bulk GaN single crystal
• blue light emitting diode
• heterostructured field effect transistor
• photovoltaic cell
• laser diode

Details

• CRID: 1390845702290838272
• NII Article ID: 10030594790
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.81.6_455
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 023822518
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023822518
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed