A Dual-Conduction Class-C VCO for a Low Supply Voltage

• OKADA Kenichi

  Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology

• NOMIYAMA You

  Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology

• MURAKAMI Rui

  Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology

• MATSUZAWA Akira

  Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology

抄録

This paper proposes a dual-conduction class-C VCO for ultra-low supply voltages. Two cross-coupled NMOS pairs with different bias points are employed. These NMOS pairs realize an impulse-like current waveform to improve the phase noise in the low supply conditions. The proposed VCO was implemented in a standard 0.18µm CMOS technology, which oscillates at a carrier frequency of 4.5GHz with a 0.2-V supply voltage. The measured phase noise is -104dBc/Hz@1MHz-offset with a power consumption of 114µW, and the FoM is -187dBc/Hz.

収録刊行物

• IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

  IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E95-A (2), 506-514, 2012

  一般社団法人 電子情報通信学会

キーワード

• VCO
• class-C
• dual conduction
• CMOS
• low supply voltage
• impulse sensitivity function (ISF)

詳細情報

• CRID: 1390282681288411520
• NII論文ID: 10030607688
• NII書誌ID: AA10826239
• DOI: 10.1587/transfun.e95.a.506
• ISSN: 17451337
• ISSN: 09168508
• Web Site: http://www.jstage.jst.go.jp/article/transfun/E95.A/2/E95.A_2_506/_pdf
• 本文言語コード: en
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