Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

• TERANISHI Atsushi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• SUZUKI Safumi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• SHIZUNO Kaoru

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• ASADA Masahiro

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• SUGIYAMA Hiroki

  NTT Photonics Laboratories, NTT Corporation

• YOKOYAMA Haruki

  NTT Photonics Laboratories, NTT Corporation

抄録

We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6-1THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The transit time across the collector depletion region was estimated from measured results of the dependence of oscillation frequency on RTD mesa area. The estimated transit time was slightly reduced with the introduction of the graded emitter, probably due to reduction of the electron transition between Γ and L bands resulted from the low electric field in the collector depletion region.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E95-C (3), 401-407, 2012

  一般社団法人 電子情報通信学会

キーワード

• resonant tunneling diodes
• terahertz oscillator
• graded emitter
• collector transit time

詳細情報

• CRID: 1390282679355178496
• NII論文ID: 10030610433
• NII書誌ID: AA10826283
• DOI: 10.1587/transele.e95.c.401
• BIBCODE: 2012IEITE..95..401T
• ISSN: 17451353
• ISSN: 09168524
• Web Site: http://www.jstage.jst.go.jp/article/transele/E95.C/3/E95.C_3_401/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可