High Mobility in a Stable Transparent Perovskite Oxide

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著者

    • Kim Hyung Joon Kim Hyung Joon
    • Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Kim Useong Kim Useong
    • Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Kim Hoon Min [他] Kim Hoon Min
    • Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Kim Tai Hoon
    • Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Mun Hyo Sik
    • Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Jeon Byung-Gu
    • Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Hong Kwang Taek
    • Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Lee Woong-Jhae
    • Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Ju Chanjong
    • Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Kim Kee Hoon
    • Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
    • Char Kookrin
    • Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea

抄録

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm2 V-1 s-1 at a doping level of 8\times 10^{19} cm-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm2 V-1 s-1 at a doping level of 4.4\times 10^{20} cm-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 °C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.

収録刊行物

  • Applied physics express

    Applied physics express 5(6), 061102-061102-3, 2012-06-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030769504
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023762611
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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