Enhanced Carrier Generation in Nb-Doped SnO₂ Thin Films Grown on Strain-Inducing Substrates Enhanced Carrier Generation in Nb-Doped SnO2 Thin Films Grown on Strain-Inducing Substrates

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We report the effect of lattice strain from the substrate on carrier generation in Nb-doped SnO2 (NTO) transparent conductive oxide (TCO) thin films. The carrier activation efficiency of Nb was strongly affected by in-plane tensile strain, and the NTO films grown on c-Al2O3 and anatase TiO2 seed layers had carrier density (n_{\text{e}}) as high as 3\times 10^{20} cm-3. In contrast, strain-free NTO films grown on glass exhibited much smaller n_{\text{e}} due to the formation of deep impurity levels. These results imply that NTO has potential as a practical TCO in the presence of substrate--film epitaxial interaction.

収録刊行物

  • Applied physics express

    Applied physics express 5(6), 061201-061201-3, 2012-06-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030769533
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023762630
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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