Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)

この論文にアクセスする

この論文をさがす

著者

抄録

Passivation of InP surface was carried out in situ with molecular-beam-deposited high-\kappa Al2O3. InP samples with surface orientations of (001), (110), and (111) were investigated. An atomically smooth Al2O3/InP(001) interface was observed without interfacial layer formation. In-rich surfaces gave better interfacial quality as evidenced by the improved capacitance--voltage characteristics, exhibiting smaller frequency dispersions and minimized inversion response. The energy distributions of interfacial traps (D_{\text{it}}'s) were revealed by conductance measurement for the samples with In-rich surfaces. The D_{\text{it}}'s are as low as {\sim}10^{11} cm-2 eV-1 near the conduction band edge, while those near the midgap region are {\sim}10^{13} cm-2 eV-1.

収録刊行物

  • Applied physics express

    Applied physics express 5(6), 061202-061202-3, 2012-06-25

    The Japan Society of Applied Physics

参考文献:  21件中 1-21件 を表示

  • <no title>

    CHAU R.

    Tech. Dig. IEEE Compound Semiconductors Integrated Circuit Symp., 2005 17, 2005

    被引用文献1件

  • <no title>

    HEYNS M.

    MRS Bull. 34, 485, 2009

    被引用文献1件

  • <no title>

    CHU L. K.

    Appl. Phys. Lett. 94, 202108, 2009

    被引用文献1件

  • <no title>

    LIN T. D.

    Appl. Phys. Lett. 100, 172110, 2012

    被引用文献1件

  • <no title>

    GOEL N.

    Appl. Phys. Lett. 91, 093509, 2007

    被引用文献1件

  • <no title>

    MERCKLING C.

    J. Appl. Phys. 109, 073719, 2011

    被引用文献1件

  • <no title>

    WU Y. Q.

    Appl. Phys. Lett. 91, 022108, 2007

    被引用文献1件

  • <no title>

    RADOSAVLJEVIC M.

    IEDM Tech. Dig., 2009 319, 2009

    被引用文献1件

  • <no title>

    ZHAO H.

    Appl. Phys. Lett. 96, 102101, 2010

    被引用文献1件

  • <no title>

    CHU L. K.

    Appl. Phys. Lett. 98, 142901, 2011

    被引用文献1件

  • <no title>

    CHANG Y. C.

    Appl. Phys. Lett. 97, 112901, 2010

    被引用文献1件

  • <no title>

    CHAGAROV E.

    Surf. Sci. 603, 3191, 2009

    被引用文献1件

  • <no title>

    MERCKLING C.

    Surf. Sci. 605, 1778, 2011

    被引用文献1件

  • <no title>

    CHENG K. Y.

    J. Appl. Phys. 52, 1015, 1981

    被引用文献1件

  • <no title>

    LU H. L.

    Appl. Phys. Lett. 95, 152103, 2009

    被引用文献1件

  • <no title>

    NICOLLIAN E. H.

    MOS Physics and Technology, 1982

    被引用文献1件

  • <no title>

    BRAMMERTZ G.

    Appl. Phys. Lett. 91, 133510, 2007

    被引用文献1件

  • <no title>

    URABE Y.

    IEDM Tech. Dig., 2010 142, 2010

    被引用文献1件

  • <no title>

    LIN D.

    ECS Trans. 28(5), 173, 2010

    被引用文献1件

  • <no title>

    TAOKA N.

    Int. Workshop Dielectric Thin Films for Future ULSI Devices : Science and Technology (IWDTF), 2011 149, 2011

    被引用文献1件

  • <no title>

    SPICER W. E.

    J. Vac. Sci. Technol. 16, 1422, 1979

    DOI 被引用文献14件

各種コード

  • NII論文ID(NAID)
    10030769548
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023762656
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ