High-Power, Low-Efficiency-Droop Semipolar (20\bar{2}\bar{1}) Single-Quantum-Well Blue Light-Emitting Diodes

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著者

    • Zhao Yuji
    • Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106-9560, U.S.A.
    • Speck James S.
    • Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
    • Nakamura Shuji
    • Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
    • DenBaars Steven P.
    • Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
    • Feezell Daniel
    • Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.

抄録

We demonstrate a small-area (0.1 mm2) semipolar (20\bar{2}\bar{1}) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460 mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400 A/cm2, respectively. The device showed little blue shift and had a narrow full width at half maximum (FWHM). Micro-electroluminescence (μ-EL) and scanning transmission electron microscope (STEM) images indicate a high-quality InGaN quantum well (QW) layer.

収録刊行物

  • Applied physics express

    Applied physics express 5(6), 062103-062103-3, 2012-06-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030769713
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023762837
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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