Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring

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著者

    • Ma Shaojun Ma Shaojun
    • Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Sugiyama Masakazu
    • Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Nakano Yoshiaki
    • Research Center for Advanced Science and Technology, The University of Tokyo, Meguro, Tokyo 153-8904, Japan

抄録

The performance of InGaAs/GaAsP multiple-quantum-well (MQW) solar cells was evaluated and correlated with in situ curvature measurement. The average strain inside MQWs was varied by changing the GaAsP thickness. Strain-balanced MQW cells exhibited the best performance. Highly strained MQW cells suffered from defects and dislocations, resulting in poor efficiency. The average strain inside the structure had good agreement with cell properties. Strain-balanced InGaAs/GaAsP MQWs seem to have good potential for enhancing the efficiency of lattice-matched III--V/Ge multiple-junction solar cells. Hence, the crystal growth process should be precisely monitored and carefully controlled in a manner such that the extent of strain accumulation is minimized.

収録刊行物

  • Applied physics express

    Applied physics express 5(6), 062301-062301-3, 2012-06-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030769767
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023762885
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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