Magnetic Tunnel Junctions with Perpendicular Anisotropy Using a Co₂FeAl Full-Heusler Alloy Magnetic Tunnel Junctions with Perpendicular Anisotropy Using a Co2FeAl Full-Heusler Alloy

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We fabricated perpendicularly magnetized magnetic tunnel junctions (p-MTJs) with an ultrathin Co2FeAl (CFA) full-Heusler alloy electrode having large interface magnetic anisotropy of CFA/MgO. An out-of-plane tunnel magnetoresistance (TMR) ratio of 53% at room temperature was observed in CFA/MgO/Co20Fe60B20 p-MTJs. By inserting a 0.1-nm-thick Fe (Co50Fe50) layer between the MgO and Co20Fe60B20 layers, The TMR ratio was significantly enhanced to 91% (82%) due to the improved interface. The bias voltage dependence of differential conductance did not clearly show coherent tunneling characteristics for ultrathin CFA-MTJs, suggesting that a higher TMR ratio may be achieved by improving the B2 ordering of CFA and/or interface structure.

収録刊行物

  • Applied physics express

    Applied physics express 5(6), 063003-063003-3, 2012-06-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030769917
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023762996
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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