金ナノ粒子とナノギャップ電極を用いた単電子トランジスタ

• 真島 豊

  東京工業大学応用セラミックス研究所 CREST-JST

書誌事項

タイトル別名

• Single-Electron Transistor made by Au Nanoparticles and Nanogap Electrodes
• キン ナノ リュウシ ト ナノギャップ デンキョク オ モチイタ タンデンシ トランジスタ

抄録

  A combination of bottom-up processes with top-down processes is one of the candidates to fabricate nanodevices with precise structures in a subnanometer scale. Single-electron transistors (SETs) have been studied extensively, because SETs can be nanodevices with low power consumption and high charge sensitivity. For the practical application of SETs, fabrication techniques for a precise structure, high process yield, and high stability need to be developed. Here, we demonstrate ideal Coulomb diamonds in Au nanoparticles (NPs) SETs. Gap separation of nanogap electrodes was controlled by the electroless Au plating method. Size controlled Au NPs are chemisorbed between the nanogap electrodes as Coulomb islands.<br>

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｖａｃｕｕｍ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｖａｃｕｕｍ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 55 (7), 328-332, 2012

  一般社団法人 日本真空学会

キーワード

• Spectroscopy
• Surfaces and Interfaces
• Instrumentation
• General Materials Science

詳細情報

• CRID: 1390001205294682752
• NII論文ID: 10030807119
• NII書誌ID: AA12298652
• DOI: 10.3131/jvsj2.55.328
• BIBCODE: 2012JVSJ...55..328M
• COI: 1:CAS:528:DC%2BC38XhsFWht73F
• ISSN: 18824749
• ISSN: 18822398
• NDL書誌ID: 023902793
• Web Site: http://id.ndl.go.jp/bib/023902793
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023902793
• 本文言語コード: ja
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可