Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOInFETs

• SCHENK A.

収録刊行物

• Solid-State Electronics

  Solid-State Electronics 54 (2), 115-233, 2009

詳細情報

• CRID: 1572543025652226816
• NII論文ID: 10030941268
• データソース種別:
  • CiNii Articles