I-MOS : A novel semiconductor device with a subthreshold slope lower than kT/q

• GOPALAKRISHNAN K.

収録刊行物

• Digest of International Devices Meeting, San Francisco, CA, Dec. 2002

  Digest of International Devices Meeting, San Francisco, CA, Dec. 2002 289-292, 2002

詳細情報

• CRID: 1571417125745383168
• NII論文ID: 10030941299
• データソース種別:
  • CiNii Articles