Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors

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著者

    • SUN Min-Chul
    • Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University
    • KIM Hyun Woo
    • Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University
    • KIM Sang Wan
    • Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University
    • KIM Garam
    • Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University
    • KIM Hyungjin
    • Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University
    • PARK Byung-Gook
    • Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University

抄録

As an add-on device option for the ultra-low power CMOS technology, the double-gated vertical-channel Tunnel Field-Effect Transistors (TFETs) of different source configurations are comparatively studied from the perspectives of fabrication and current drivability. While the top-source design where the source of the device is placed on the top of the fin makes the fabrication and source engineering much easier, it is more susceptible to parasitic resistance issue. The bottom-source design is difficult to engineer the tunneling barrier and may require a special replacement technique. Examples of the schemes to engineer the tunneling barrier for the bottom-source TFET are suggested. A TCAD simulation study on the bottom-source devices shows that both the parasitic resistance of source region and the current enhancement mechanism by field coupling need be carefully considered in designing the source.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 95(5), 826-830, 2012-05-01

    一般社団法人 電子情報通信学会

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各種コード

  • NII論文ID(NAID)
    10030941312
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  CJP引用  J-STAGE 
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