Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO_2 and S_3N_4 as Trapping Layer

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著者

    • LEE Sang-Youl
    • Department of Electronics Engineering, Chungnam National University
    • YANG Seung-Dong
    • Department of Electronics Engineering, Chungnam National University
    • OH Jae-Sub
    • Department of Electronics Engineering, Chungnam National University
    • YUN Ho-Jin
    • Department of Electronics Engineering, Chungnam National University
    • KIM Yu-Mi
    • Department of Electronics Engineering, Chungnam National University
    • LEE Hi-Deok
    • Department of Electronics Engineering, Chungnam National University
    • LEE Ga-Won
    • Department of Electronics Engineering, Chungnam National University

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 95(5), 831-836, 2012-05-01

参考文献:  31件中 1-31件 を表示

各種コード

  • NII論文ID(NAID)
    10030941323
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌 
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