Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics

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著者

    • RYOO Kyung-Chang
    • Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • OH Jeong-Hoon
    • Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • JUNG Sunghun
    • Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • KIM Hyngjin
    • Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • PARK Byung-Gook
    • Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

抄録

Effects of conductive defects on unipolar resistive random access memory (RRAM) are investigated in order to reduce the operation current for high density and low power RRAM applications. It is clarified that forming voltage decreases with increasing charged conductive defects which are a source of conductive filament (CF) path and with decreasing cell thickness. Random circuit breaker (RCB) network simulation model which is a dynamic percolation simulation model is used to elucidate these effects. From this simulation results, the optimal cell thickness with sufficient conductive defect shows improved resistive switching characteristics such as low forming voltage, small set voltage distribution and low reset current. From the deep understanding of relationship between conductive defect in various cell thickness and other resistive switching parameters, RRAM with low forming voltage and reset current can be obtained and it will be one of the most promising next generation nonvolatile memories.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 95(5), 842-846, 2012-05-01

    一般社団法人 電子情報通信学会

参考文献:  15件中 1-15件 を表示

各種コード

  • NII論文ID(NAID)
    10030941363
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
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