Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM

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抄録

The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 95(5), 847-853, 2012-05-01

    一般社団法人 電子情報通信学会

参考文献:  13件中 1-13件 を表示

各種コード

  • NII論文ID(NAID)
    10030941379
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
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