Fabrication and Characterization of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) (P(VDF-TrFE)) Thin Film on Flexible Substrate by Detach-and-Transferring

この論文にアクセスする

この論文をさがす

著者

    • KIM Woo Young
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
    • LEE Hee Chul
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)

抄録

In this paper, a 60nm-thick ferroelectric film of poly(vinylidene fluoride-trifluoroethylene) on a flexible substrate of aluminum foil was fabricated and characterized. Compared to pristine silicon wafer, Al-foil has very large root-mean-square (RMS) roughness, thus presenting challenges for the fabrication of flat and uniform electronic devices on such a rough substrate. In particular, RMS roughness affects the leakage current of dielectrics, the uniformity of devices, and the switching time in ferroelectrics. To avoid these kinds of problems, a new thin film fabrication method adopting a detach-and-transfer technique has been developed. Here, ‘detach’ means that the ferroelectric film is detached from a flat substrate (sacrificial substrate), and ‘transfer’ refers to the process of the detached film being moved onto the rough substrate (main substrate). To characterize the dielectric property of the transferred film, polarization and voltage relationships were measured, and the results showed that a hysteresis loop could be obtained with low leakage current.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 95(5), 860-864, 2012-05-01

    一般社団法人 電子情報通信学会

参考文献:  20件中 1-20件 を表示

各種コード

  • NII論文ID(NAID)
    10030941402
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
ページトップへ