Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)

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We have investigated the low-power circuit applicability of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs). Based on the device-level comparison of HG, SiO<sub>2</sub>-only and high-<i>k</i>-only TFETs, their circuit performance and energy consumption have been discussed. It has been shown that HG TFETs can deliver ∼ 14400x higher performance than the SiO<sub>2</sub>-only TFETs and ∼ 17x higher performance than the high-<i>k</i>-only TFETs due to its higher on current and lower capacitance at the same static power, same power supply. It has been revealed that HG TFETs have better voltage scalability than the others. It is because HG TFETs dissipate only ∼8% of energy consumption of SiO<sub>2</sub>-only TFETs and ∼17% of that of high-<i>k</i>-only TFETs under the same performance condition.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 95(5), 910-913, 2012-05-01

    The Institute of Electronics, Information and Communication Engineers

参考文献:  13件中 1-13件 を表示

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各種コード

  • NII論文ID(NAID)
    10030941569
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    09168524
  • データ提供元
    CJP書誌  CJP引用  J-STAGE 
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