Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells

この論文にアクセスする

この論文をさがす

著者

    • HAN Boram
    • Department of Electronic Engineering, Sogang University

抄録

The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.

収録刊行物

  • IEICE transactions on electronics

    IEICE transactions on electronics 95(5), 914-916, 2012-05-01

    一般社団法人 電子情報通信学会

参考文献:  6件中 1-6件 を表示

各種コード

  • NII論文ID(NAID)
    10030941583
  • NII書誌ID(NCID)
    AA10826283
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    09168524
  • データ提供元
    CJP書誌  J-STAGE 
ページトップへ