Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.
- IEICE transactions on electronics
IEICE transactions on electronics 95(5), 914-916, 2012-05-01
The Institute of Electronics, Information and Communication Engineers