Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells

• HAN Boram

  Department of Electronic Engineering, Sogang University

• CHOI Woo Young

  Department of Electronic Engineering, Sogang University

抄録

The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E95.C (5), 914-916, 2012

  一般社団法人 電子情報通信学会

キーワード

• nano-electromechanical (NEM) non-volatile memory cell
• fringe field effect
• beam width

詳細情報

• CRID: 1390282679354505984
• NII論文ID: 10030941583
• NII書誌ID: AA10826283
• DOI: 10.1587/transele.e95.c.914
• BIBCODE: 2012IEITE..95..914H
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E95.C/5/E95.C_5_914/_pdf
• 本文言語コード: en
• データソース種別:
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  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可