希土類酸化物薄膜の新規な創製法の確立とそのトライボロジー特性(第2報) : イットリウム酸化物薄膜  [in Japanese] A Novel Coating Method for Rare Earth Metal Oxide Films and Their Ttribological Properties (Part 2) : Yttrium Oxide Film  [in Japanese]

Access this Article

Search this Article

Author(s)

Abstract

Yttrium oxide, Y<sub>2</sub>O<sub>3</sub>, was deposited on a Si (001) substrate in ultrahigh vacuum by the simultaneous irradiation of arc plasma of yttrium and hyperthermal atomic oxygen, the principles and procedures of which were introduced in the preceding article. X-ray photoelectron spectroscopy revealed that the stoichiometry of Y<sub>2</sub>O<sub>3</sub> was identical from the top to the bottom of the film. Y<sub>2</sub>O<sub>3</sub> film deposited at a substrate temperature of 300℃, followed by a post-annealing process at 700℃, showed a low friction coefficient of approximately 0.1. At +high deposition temperatures, e.g. 500℃ and 700℃, faint Si2p peak was detected at an early stage of Ar depth profiling. Presumably, this may lead to inferior film properties. Low friction as well as good adhesion property of Y<sub>2</sub>O<sub>3</sub> film to the Si(001) seems applicable to protective coating of MEMS (microelectromechanical systems) and other Si technologies.

Yttrium oxide, Y<sub>2</sub>O<sub>3</sub>, was deposited on a Si (001) substrate in ultrahigh vacuum by the simultaneous irradiation of arc plasma of yttrium and hyperthermal atomic oxygen, the principles and procedures of which were introduced in the preceding article. X-ray photoelectron spectroscopy revealed that the stoichiometry of Y<sub>2</sub>O<sub>3</sub> was identical from the top to the bottom of the film. Y<sub>2</sub>O<sub>3</sub> film deposited at a substrate temperature of 300℃, followed by a post-annealing process at 700℃, showed a low friction coefficient of approximately 0.1. At +high deposition temperatures, e.g. 500℃ and 700℃, faint Si2p peak was detected at an early stage of Ar depth profiling. Presumably, this may lead to inferior film properties. Low friction as well as good adhesion property of Y<sub>2</sub>O<sub>3</sub> film to the Si(001) seems applicable to protective coating of MEMS (microelectromechanical systems) and other Si technologies.

Journal

  • JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS

    JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS 57(8), 560-567, 2012-08-15

    Japanese Society of Tribologists

References:  16

Codes

  • NII Article ID (NAID)
    10030944765
  • NII NACSIS-CAT ID (NCID)
    AN10056166
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    09151168
  • NDL Article ID
    023938738
  • NDL Call No.
    Z16-540
  • Data Source
    CJP  NDL  J-STAGE 
Page Top